RADIATIVE PROCESSES IN DIRECT AND INDIRECT BAND GAP IN1-XGAXP

[1] Bennett Jr W. R., 1965, APPL OPT S, V2, P34

[2] BAND STRUCTURE OF INGAP FROM PRESSURE EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5291 - &

[3] HAKKI BW, 1970, J ELECTROCHEM SOC, V117, pC94

[4] Heim U., 1970, J LUMIN, V1, P542

[5] HILSUM C, 1968, 9 P INT C PHYS SEM M

[6] DELTA1 CONDUCTION-BAND MINIMUM OF GE FROM HIGH-PRESSURE STUDIES ON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1968, 171 (03): : 836 - +

[7] JOHNSON EJ, 1967, SEMICONDUCTORS SEMIM

[8] LORENZ MR, 1968, APPL PHYS LETTERS, V13, P42

[9] PAUL W, 1968, 9 P INT C PHYS SEM, V1, P16

[10] KINETICS OF RADIATIVE RECOMBINATION AT RANDOMLY DISTRIBUTED DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW, 1965, 140 (1A): : A202 - +

[1] Bennett Jr W. R., 1965, APPL OPT S, V2, P34

[2] BAND STRUCTURE OF INGAP FROM PRESSURE EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (13) : 5291 - &

[3] HAKKI BW, 1970, J ELECTROCHEM SOC, V117, pC94

[4] Heim U., 1970, J LUMIN, V1, P542

[5] HILSUM C, 1968, 9 P INT C PHYS SEM M

[6] DELTA1 CONDUCTION-BAND MINIMUM OF GE FROM HIGH-PRESSURE STUDIES ON P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1968, 171 (03): : 836 - +

[7] JOHNSON EJ, 1967, SEMICONDUCTORS SEMIM

[8] LORENZ MR, 1968, APPL PHYS LETTERS, V13, P42

[9] PAUL W, 1968, 9 P INT C PHYS SEM, V1, P16

[10] KINETICS OF RADIATIVE RECOMBINATION AT RANDOMLY DISTRIBUTED DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW, 1965, 140 (1A): : A202 - +