FEMTOSECOND LASER-INDUCED MELTING OF GAAS PROBED BY OPTICAL 2ND-HARMONIC GENERATION

被引：16

作者：

SCHRODER, T ^{[1
]}

RUDOLPH, W ^{[1
]}

GOVORKOV, SV ^{[1
]}

SHUMAY, IL ^{[1
]}

机构：

[1] RV KHOKHLOV NONLINEAR OPT LAB,MOSCOW 119899,USSR

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 01期

关键词：

07.65; 68.65;

D O I：

10.1007/BF00324464

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Primary steps of melting (disordering) of GaAs surface layers after femtosecond pulse excitation have been measured through second-harmonic generation in reflection. A numerical fit of the experimental data yield a characteristic time delay between excitation and lattice melting of about 75 fs. © 1990 Springer-Verlag.

引用

页码：49 / 51

页数：3

共 10 条

[1]

BIEGELSEN DK, 1985, ENERGY BEAM SOLID IN, V35

[2]

BLOEMBERGEN N, 1984, APPL PHYS LETT, V45, P1019

[3]

COMPAANA, 1985, J LUMIN, V30, P425

[4] SELF PHASE MODULATION IN A FEMTOSECOND PULSE-AMPLIFIER WITH SUBSEQUENT COMPRESSION [J].