INFLUENCE OF CIRCUIT PARAMETERS ON GUNN-OSCILLATOR PERFORMANCE

被引：2

作者：

POLLMANN, H

ENGELMAN.RW

BOSCH, BG

机构：

[1] A EG- Telef unken Forschungsinstitut

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 20期

关键词：

D O I：

10.1049/el:19690373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Output power and tuning range of Gunn oscillators are determined as functions of the resonant-load resistance. Differing n0L products (1·2 and 4·8 x 1012cm-2) lead to strikingly different results which are related to the delayed-and quenched-domain resonant modes, respectively. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：492 / +

页数：1

共 8 条

[1]

Engelmann R., 1968, Nachrichtentechnische Fachberichte (NTF), V35, P487

[2]

ENGLEMANN RWH, 1966, IEEE T ELECTRON DEV, VED13, P44

[3] PRINCIPLES OF A PHENOMENOLOGICAL THEORY OF GUNN-EFFECT DOMAIN DYNAMICS [J].

HEINLE, W .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :583-+

[4] REACTANCE OF GAAS BULK OSCILLATOR [J].

MATINO, H ;

KURU, I .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02) :291-&

[5]

MCCUMBER OE, 1966, IEEE T, VED13, P4

[6]

POLLMANN H, 1969, NACHRICHTENTECH Z, V22, P135

[7] SOME ASPECTS OF GUNN EFFECT OSCILLATORS [J].

ROBSON, PN ;

MAHROUS, SM .

RADIO AND ELECTRONIC ENGINEER, 1965, 30 (06) :345-&

[8]

WARNER FL, 1966, ELECTRON LETT, V2, P260

← 1 →