A CMOS BANDGAP REFERENCE FOR DIFFERENTIAL SIGNAL-PROCESSING

被引：14

作者：

NICOLLINI, G ^{[1
]}

SENDEROWICZ, D ^{[1
]}

机构：

[1] SYNCHRODESIGN INC,BERKELEY,CA 94704

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 01期

关键词：

D O I：

10.1109/4.65708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A switched-capacitor fully differential bandgap reference is presented that employs a standard double-poly CMOS process. It generates a differential reference voltage of 6.2 V with a standard deviation of about 24 mV and a typical temperature stability of 15.2 ppm/degrees-C over an extended temperature range from -40 to +85-degrees-C. These performance results are obtained without using any trimming in mass production. The bandgap reference only occupies 730 mil2 and dissipates 4.8 mW at +/-5-V power supplies. A measured power supply rejection of about 90 dB until 500 kHz is the best ever reported at high frequency.

引用

页码：41 / 50

页数：10

共 23 条

[1] A PROGRAMMABLE CMOS DUAL CHANNEL INTERFACE PROCESSOR FOR TELECOMMUNICATIONS APPLICATIONS [J].