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LONGO RT, 1980, INT ELECTRON DEV M W
THE IV CHARACTERISTICS FOR PLANAR THERMIONIC DIODES WITH PATCHY CATHODES
被引：10
作者：
BECK, AH
WANG, DA
机构：
关键词：
D O I：
10.1080/00207218108901377
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
The patchy cathode is modeled as a distribution of highly emitting areas in a low emission background. The central limit theorem is used to reduce the distribution to a single gaussian spot. The current-voltage equation is then derived for emission from the gaussian spot and is found to be of a shape which fits well with measured characteristics. Detailed application is made to several diodes using tungsten matrix and rhenium coated tungsten matrix cathodes.
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页码：717 / 733
页数：17
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