ELECTRICAL AND STRUCTURAL-PROPERTIES OF INAS LAYERS ON (100)GAAS SUBSTRATES PREPARED BY MOLECULAR-BEAM DEPOSITION

被引：19

作者：

MEGGITT, BT ^{[1
]}

PARKER, EHC ^{[1
]}

KING, RM ^{[1
]}

GRANGE, JD ^{[1
]}

机构：

[1] CITY LONDON POLYTECH,DEPT PHYS,CASS SEMICONDUCTOR & SURFACE RES,LONDON EC3N 2EY,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 02期

关键词：

D O I：

10.1016/0022-0248(80)90105-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：538 / 548

页数：11

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