ALTERATION OF ELECTRON-ELECTRON INTERACTION EFFECTS IN METAL-INSULATOR-METAL TRILAYERS

被引:8
作者
GIORDANO, N
MONNIER, JD
机构
[1] Department of Physics, Purdue University, West Lafayette, IN
来源
EUROPHYSICS LETTERS | 1993年 / 24卷 / 02期
关键词
D O I
10.1209/0295-5075/24/2/009
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have studied electron-electron interaction effects in Sb films which were part of Al/SiO/Sb trilayer structures. The Al film was designed to act as a <<ground plane>>, and was separated from the Sb by an insulating layer of SiO, which was as thin as almost-equal-to 60 angstrom, and contained no pinholes or shorts, so that the Sb and Al layers were electrically isolated. By comparing the behavior of these Sb films with similar films deposited on glass substrates (i.e. Sb films which were not located near any other conducting layers) we have observed that electron-electron interaction effects are modified by the presence of the Al ground plane. The contribution of electron-electron interactions to the conductance of the Sb film is suppressed in the trilayer samples, while the electron-electron scattering rate appears to be somewhat enhanced.
引用
收藏
页码:127 / 132
页数:6
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