GROWTH STEPS AND ETCH PITS APPEARING ON (100) PLANES OF DIAMONDS PREPARED BY COMBUSTION-FLAME DEPOSITION METHOD

The growth steps and etch pits were observed on {100} planes of diamonds prepared by C2H2-O2 combustion-flame deposition method. The direction of the growth steps and the edges of the etch pits were both parallel to [110]. They are in good agreement with the (2x1) surface reconstruction hypothesis, which suggests that the surface dangling bonds under these growing conditions are not terminated with hydrogen.