VARIATION OF CONTACT RESISTANCE OF ELECTROLESS NI-P ON SILICON WITH THE CHANGE OF PHOSPHORUS CONCENTRATION IN THE DEPOSIT

被引:13
作者
SINGH, BK
MITRA, RN
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D O I
10.1149/1.2129523
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2578 / 2580
页数:3
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SCHLABACK TD, 1963, PRINTED INTEGRATED C, P137
[6]   ELECTROLESS NIP PROCESSING FOR HYBRID INTEGRATED-CIRCUITS [J].
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MICROELECTRONICS AND RELIABILITY, 1976, 15 (03) :221-226