GENERATION RATE OF 2D EXCITONS IN QUANTUM-WELLS

被引:22
作者
THILAGAM, A [1 ]
SINGH, J [1 ]
机构
[1] NO TERR UNIV, FAC SCI, POB 40146, CASUARINA, NT 0811, AUSTRALIA
关键词
D O I
10.1016/0022-2313(93)90078-2
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The theory of generation of a heavy-hole exciton (2D exciton) from an electron hole pair in a semiconductor quantum well (QW) is presented. Energy is conserved by emission of an acoustic phonon in the final state. The transition rate is calculated using a quasi 2D exciton-phonon interaction operator. In GaAs AlxGa1-xAs quantum wells, the rate of generation is found to be 10 x 10(9)-1 x 10(9) s-1 for quantum well widths 25 to 200 angstrom, which agrees well with recent experimental results.
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页码:11 / 16
页数:6
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