THE RANGE OF DIFFUSION ENHANCEMENT OF B AND P IN SI DURING THERMAL-OXIDATION

被引：16

作者：

MIZUO, S

HIGUCHI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1143/JJAP.21.272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：272 / 275

页数：4

共 12 条

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[9] ANOMALOUS DIFFUSION OF B AND P IN SI DIRECTLY MASKED WITH SI3N4 [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02) :281-286

[10] RETARDATION OF SB DIFFUSION IN SI DURING THERMAL-OXIDATION [J].

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