NEW THEORETICAL APPROACH OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS

被引：36

作者：

DELERUE, C

LANNOO, M

ALLAN, G

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.39.1669

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1669 / 1681

页数：13

共 41 条

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