ELECTRONIC-STRUCTURE OF ORDERED AND DISORDERED CU3AU - THE BEHAVIOR OF THE AU 5D BANDS

被引：70

作者：

SHAM, TK ^{[1
]}

YIU, YM ^{[1
]}

KUHN, M ^{[1
]}

TAN, KH ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,CANADIAN SYNCHROTRON RADIAT FACIL,STOUGHTON,WI 53589

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.41.11881

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic behavior of the Au 5d bands in the ordered and disordered Cu3Au has been investigated with x-ray-absorption near-edge structure (XANES) and Al K x-ray (1486.6 eV) photoemission (XPS) measurements. The XANES and XPS results clearly show that Au loses 5d character (count) upon the formation of Cu3Au in both ordered and disordered phases and that the Au 5d count depletes more in the ordered phase than in the disordered phase. In addition, the Au 5d hole population is found to be nonstatistical ([h5/2]:[h3/2]<1:1) in Cu3Au alloys as compared to a near-statistical 5d population ([h5/2]:[h3/2]2:1) in AuAl2 and AuGa2 (Aunon-transition-metal compounds). These observations are interpreted on the basis of the charge-compensation model. The nonstatistical Au 5d hole distribution derived from XANES together with the photoemission results indicates uneven Au 5d5/2 and 5d3/2 contribution (relativistic effect) in the Au 5dCu3d interaction in Cu3Au. © 1990 The American Physical Society.

引用

页码：11881 / 11886

页数：6

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