EFFECT OF INPLANE MAGNETIC-FIELDS ON THE ELECTRONIC-STRUCTURE AND PHOTOLUMINESCENCE SPECTRA IN DOPED SEMICONDUCTOR QUANTUM-WELLS

被引：4

作者：

LYO, SK

JONES, ED

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 83卷 / 12期

关键词：

D O I：

10.1016/0038-1098(92)90524-D

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of in-plane magnetic fields on the carrier energy dispersion, mass enhancement and the photoluminescence line-shape is investigated in semiconductor quantum wells. Exact results are obtained for parabolic quantum wells. An accurate numerical method applicable for arbitrary confinement potentials is introduced. This technique, based on a plane-wave basis set, is applied to the square-well potential. Minimum-photoluminescence-energy data are presented as a function of magnetic field. The theoretical results yield reasonable agreement with the data.

引用

页码：975 / 978

页数：4

共 7 条

[1] IMPURITY EFFECT ON THE LINE-SHAPE OF THE PHOTOLUMINESCENCE SPECTRUM OF MODULATION-DOPED QUANTUM-WELLS [J].