EXCITE-PROBE FEL (CLIO) STUDY OF 2-PHOTON-INDUCED CARRIER DYNAMICS IN NARROW-GAP SEMICONDUCTORS

被引：4

作者：

MURDIN, BN

RANGELROJO, R

PIDGEON, CR

KIMMITT, MF

KAR, AK

JAROSZYNSKI, DA

ORTEGA, JM

PRAZERES, R

GLOTIN, F

HUTCHINGS, DC

机构：

[1] HERIOT WATT UNIV, DEPT PHYS, EDINBURGH EH14 4AS, MIDLOTHIAN, SCOTLAND

[2] UNIV GLASGOW, DEPT ELECT & ELECTR ENGN, GLASGOW G12 8QQ, SCOTLAND

[3] UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 341卷 / 1-3期

关键词：

D O I：

10.1016/0168-9002(94)90340-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In a previous paper measurements were reported of two-photon absorption (TPA) in the Darrow gap semiconductors InAs and InSb utilising the mid-infrared tunability of CLIO. An assumption had to be made concerning the lifetime of the excited carriers in order to interpret the results. We have now made a direct measurement of the lifetime of two-photon-induced free holes in InAs and InSb using an excite-probe technique. We have measured the TPA coefficient over the entire range from one-photon to two-photon threshold, showing good agreement with a non-parabolic band model for the process.

引用

页码：165 / 168

页数：4

共 20 条

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