THEORY OF ELECTROABSORPTION IN DISORDERED SEMICONDUCTORS - FORMULA FOR LOW FIELD LIMIT

被引:6
作者
ESSER, B [1 ]
机构
[1] HUMBOLDT UNIV,SEKT PHYS,BERLIN,EAST GERMANY
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1974年 / 61卷 / 01期
关键词
D O I
10.1002/pssb.2220610146
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:K49 / K51
页数:3
相关论文
共 5 条
[1]  
ASPNES DA, 1973, 1 INT C MOD SPECTR S, V37
[2]   INTERBAND OPTICAL TRANSITIONS IN DISORDERED SEMICONDUCTORS [J].
BONCH-BRUEVICH, VL .
PHYSICA STATUS SOLIDI, 1970, 42 (01) :35-+
[3]   PHONON ASSISTED INTERBAND OPTICAL TRANSITIONS IN DISORDERED SEMICONDUCTORS [J].
ESSER, B .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 55 (02) :503-512
[4]   PHONON-ASSISTED INTERBAND ABSORPTION AND ELECTROABSORPTION IN DISORDERED SEMICONDUCTORS [J].
ESSER, B .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 58 (01) :149-161
[5]  
ESSER B, 1972, PHYS STATUS SOLIDI B, V51, P735