EFFECT OF PRESSURE ON ENERGY GAP OF BI2TE3

被引:56
作者
LI, CY
RUOFF, AL
SPENCER, CW
机构
关键词
D O I
10.1063/1.1728426
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1733 / &
相关论文
共 18 条
[1]   THE OPTICAL PROPERTIES OF BISMUTH TELLURIDE [J].
AUSTIN, IG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (466) :545-552
[2]   ELECTRICAL AND OPTICAL PROPERTIES OF SOME M2V-BN3VI-B SEMICONDUCTORS [J].
BLACK, J ;
CONWELL, EM ;
SEIGLE, L ;
SPENCER, CW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (03) :240-251
[3]   CHEMICAL BONDING IN BISMUTH TELLURIDE [J].
DRABBLE, JR ;
GOODMAN, CHL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :142-144
[4]   GALVANOMAGNETIC EFFECTS IN P-TYPE BISMUTH TELLURIDE [J].
DRABBLE, JR .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (465) :380-390
[5]   STRUCTURE-CELL DATA AND EXPANSION COEFFICIENTS OF BISMUTH TELLURIDE [J].
FRANCOMBE, MH .
BRITISH JOURNAL OF APPLIED PHYSICS, 1958, 9 (10) :415-417
[6]  
HANNAY NB, 1959, SEMICONDUCTORS AMERI, P421
[7]   PREPARATION AND SOME PHYSICAL PROPERTIES OF BI2TE3, SB2TE3, AND AS2TE3 [J].
HARMAN, TC ;
PARIS, B ;
MILLER, SE ;
GOERING, HL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (03) :181-190
[8]   EFFECT OF PRESSURE ON THE ELECTRICAL CONDUCTIVITY OF INSB [J].
KEYES, RW .
PHYSICAL REVIEW, 1955, 99 (02) :490-495
[9]   THE ELECTRICAL PROPERTIES OF BLACK PHOSPHORUS [J].
KEYES, RW .
PHYSICAL REVIEW, 1953, 92 (03) :580-584
[10]   THE EFFECTS OF ELASTIC DEFORMATION ON THE ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS [J].
KEYES, RW .
SOLID STATE PHYSICS, 1960, 11 :149-221