STIMULATED EMISSION AND LASER OPERATION (CW, 77 DEGREES K) OF DIRECT AND INDIRECT GAAS1-XPX ON NITROGEN ISOELECTRONIC TRAP TRANSITIONS

被引：10

作者：

SCIFRES, DR

ZACK, GW

HOLONYAK, N

KEUNE, DL

MACKSEY, HM

DUPUIS, RD

GROVES, WO

CRAFORD, MG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 05期

关键词：

D O I：

10.1063/1.1661505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2368 / &

共 34 条

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APPLIED PHYSICS LETTERS, 1970, 17 (10) :430-&

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[4] NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS-RICH GALLIUM ARSENIDE PHOSPHIDE [J].

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FAULKNER, RA .

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[6]

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[7]

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[8] EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES [J].

GROVES, WO ;

HERZOG, AH ;

CRAFORD, MG .

APPLIED PHYSICS LETTERS, 1971, 19 (06) :184-&

[9] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

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[10]

HEAVENS OA, 1965, OPTICAL PROPERTIES T, P162

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