CARRIER DIFFUSION IN SEMICONDUCTOR AVALANCHES

被引：26

作者：

KUVAS, R

LEE, CA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 07期

关键词：

D O I：

10.1063/1.1659371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3108 / &

共 11 条

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[3] NONLINEAR ANALYSIS OF MULTIFREQUENCY OPERATION OF READ DIODES [J].

KUVAS, R ;

LEE, CA .

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[4] QUASISTATIC APPROXIMATION FOR SEMICONDUCTOR AVALANCHES [J].

KUVAS, R ;

LEE, CA .

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[5]

KUVAS R, 1959, THESIS CORNELL U

[6]

NAQVI IM, 1969, THESIS CORNELL U

[7] MEASUREMENT OF HOT CARRIER DIFFUSION CONSTANT IN SEMICONDUCTORS [J].

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[8] DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON [J].

SIGMON, TW ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :320-&

[9] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J].

STRATTON, R .

PHYSICAL REVIEW, 1962, 126 (06) :2002-&

[10]

STRATTON R, 1967, J APPL PHYS, V38, P12

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