MANUFACTURABILITY ISSUES IN RAPID THERMAL CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

OZTURK, MC

SORRELL, FY

WORTMAN, JJ

JOHNSON, FS

GRIDER, DT

机构：

[1] Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695-7911

[2] Department of Aerospace and Mechanical Engineering, North Carolina State University, Raleigh, NC, 27695-7910

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1991年 / 4卷 / 02期

关键词：

D O I：

10.1109/66.79727

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rapid thermal processing (RTP) has been considered from a manufacturing point of view as a potential technology for depositing thin films by low-pressure chemical vapor deposition (LPCVD) in a single wafer manufacturing environment in this work. The results of this study suggest that new chemical processes must be developed to satisfy the throughput requirements of single wafer manufacturing and the demands of cold-wall reactor design. Issues such as temperature measurement and uniformity are reviewed and reconsidered in the context of LPCVD. New tool requirements for reduced pressure operation are discussed. New advances in tool design are needed (especially in temperature measurement) before rapid thermal chemical vapor deposition (RTCVD) can be considered as a routine manufacturable process.

引用

页码：155 / 165

页数：11

共 26 条

[1]

Singh R., Rapid isothermal processing, J. Appl Phys., 63, (1988)

[2]

Gronet C.M., King C.A., Fibbons J.F., Growth of GeSi/Si strained-layer superlattices using limited reaction processing, Proc. MRS, 71, (1986)

[3]

Gronet C.M., Sturm J.C., Williams K.E., Gibbons J.F., Wilson S.D., Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing, Appl. Phys. Lett., 48, (1986)

[4]

King C.A., Hoyt J.L., Noble D.B., Gronet C.M., Gibbons J.F., Scott M.P., Kamins T.I., Laderman S.S., Electrical and material quality of Si1_ xGex/Si p-n heterojunctions produced by limited reaction processing, IEEE Electron Device Letters, 10, (1989)

[5]

King C.A., Hoyt J.L., Gronet C.M., Gibbons J.F., Scott M., Turner J., Si/Si1_xGexheterojunctionbipolar transistors produced by limited reaction processing, IEEE Electron Device Letters, 10, (1989)

[6]

Moslehi M.M., Saraswat K.C., Formation of MOS gates by rapid thermal/microwave remote plasma multiprocessing, IEEE Electron Device Letters, EDL-8, (1987)

[7]

Liao J.C., Crowley J., Kamins T., Chemical vapor deposition of polycrystalline silicon in a rapid thermal processor, Microelectronic Manufacturing and Testing, 12, 12, (1989)

[8]

Liao J.C., Kim K., Maillot P., In-situ doped polycrystalline silicon deposited by rapid thermal chemical vapor deposition, Proc. MRS Spring 1990 Meeting, Symposium on Polysilicon Thin Films and Interfaces, (1990)

[9]

Murali V., Wu A.T., Dass L., Frost M.R., Fraser D.B., Liao J., Crowley J., In-situ processing using rapid thermal chemical vapor deposition, Journal of Electronic Materials, 18, 6, (1989)

[10]

Hill C., Jones S., Boys D., Rapid thermal annealing—Theory and practice, Reduced Thermal Processing for ULSI, (1989)

← 1 2 3 →