LASER-PULSE ANNEALING OF ION-IMPLANTED GAAS

被引：15

作者：

CAMPISANO, SU

FOTI, G

RIMINI, E

EISEN, FH

TSENG, WF

NICOLET, MA

TANDON, JL

机构：

[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

[2] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

Compendex;

D O I：

10.1063/1.327369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semiconducting gallium compounds

引用

页码：295 / 298

页数：4

共 20 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[3] OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS [J].

BARNES, PA ;

LEAMY, HJ ;

POATE, JM ;

FERRIS, SD ;

WILLIAMS, JS ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :965-967

[4] LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

CAMPISANO, SU ;

CATALANO, I ;

FOTI, G ;

RIMINI, E ;

EISEN, F ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :485-488

[5] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[6]

EGGERMONT GEJ, 1979, LASER SOLID INTERACT, P321

[7]

FAN JCC, 1978, 7TH P INT S GAAS REL

[8]

FERRIS SD, 1979, LASER SOLID INTERACT

[9]

FOTI G, 1978, PHYS LETT A, V65, P431

[10] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

GAMO, K ;

INADA, T ;

MAYER, JW ;

EISEN, FH ;

RHODES, CG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :85-89

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