3RD-ORDER NONLINEAR SUSCEPTIBILITY OF LARGE SEMICONDUCTOR MICROCRYSTALLITES

被引：14

作者：

BELLEGUIE, L ^{[1
]}

BANYAI, L ^{[1
]}

机构：

[1] UNIV FRANKFURT,INST THEORET PHYS,W-6000 FRANKFURT,GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4498

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that the theory of the third-order nonlinear susceptibility of semiconductor microcrystallites with a radius much greater than the exciton radius (''weak confinement'') has big intrinsic uncertainties due to the unknown volume dependence of the phenomenological relaxation times. These dependencies are actually sources of another type of optical nonlinearity. The third-order susceptibility increases strongly with the increasing radius of the microcrystallite in the range between 10 and 100 exciton Bohr radii and approaches a well-defined infinite radius limit.

引用

页码：4498 / 4507

页数：10

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