COMPARISON OF LIQUID-ENCAPSULATED AND SOLUTION-GROWN SUBSTRATES FOR EFFICIENT GAP DIODES

被引：17

作者：

LADANY, I

MCFARLANE, SH

BASS, SJ

机构：

[1] RCA Laboratories, Princeton

[2] S.E.R.L., Baldock, Herts

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 12期

关键词：

D O I：

10.1063/1.1657331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

收藏

页码：4984 / +

页数：1

相关论文

共 9 条

[1] Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3
[2] BASS SJ, 1968, J CRYST GROWTH, V2, P169
[3] FORMATION OF BUILT-IN LIGHT-EMITTING JUNCTIONS IN SOLUTION-GROWN GAP CONTAINING SHALLOW DONORS AND ACCEPTORS
FOSTER, LM
PLASKETT, TS
SCARDEFI.JE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (02) : 114 - &
[4] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS
GERSHENZON, M
LOGAN, RA
NELSON, DF
[J]. PHYSICAL REVIEW, 1966, 149 (02): : 580 - +
[5] GALLIUM PHOSPHIDE DOUBLE-EPITAXIAL DIODES
LADANY, I
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 993 - &
[6] STUDIES OF INDIVIDUAL DISLOCATIONS IN CRYSTALS BY X-RAY DIFFRACTION MICRORADIOGRAPHY
LANG, AR
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1748 - 1755
[7] NEWKIRK JB, 1959, T AM I MIN MET ENG, V215, P483
[8] DEFECT STRUCTURE OF GAP CRYSTALS GROWN FROM GALLIUM SOLUTIONS VAPOR PHASE AND LIQUID PHASE EPITAXIAL DEPOSITION
SAUL, RH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (11) : 1184 - &
[9] WEBB WW, 1962, DIRECT OBSERVATION I, P29