HOLE MOBILITY AT VITRIFICATION TEMPERATURE IN AMORPHOUS SELENIUM

被引：6

作者：

JUSKA, G ^{[1
]}

VENGRIS, S ^{[1
]}

机构：

[1] V KAPSUKAS STATE UNIV,VILNIUS,LISSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1002/pssa.2210160144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K27 / K29

页数：3

共 5 条

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[2] CONDUCTIVITY ANOMALY ASSOCIATED WITH GLASS TRANSITION IN VITREOUS SELENIUM (HYSTERESIS PHOTOCONDUCTIVITY OPTICAL ABSORPTIO E)
CHANG, R
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (12) : 231 - &
[3] ELECTRON AND HOLE DRIFT MOBILITIES IN VITREOUS SELENIUM
GRUNWALD, HP
BLAKNEY, RM
[J]. PHYSICAL REVIEW, 1968, 165 (03): : 1006 - &
[4] ELECTRON HALL MOBILITY IN VITREOUS HIGH-POLYMERIC SELENIUM
JUSKA, G
MATULIONIS, A
SAKALAS, A
VISCAKAS, J
[J]. PHYSICA STATUS SOLIDI, 1969, 36 (02): : K121 - +
[5] NABITOVICH YD, 1970, FIZICHNA ELEKTRONIKA, V2, P74