HALL-EFFECT IN GATE SINGLE-CRYSTALS

被引：15

作者：

AUGELLI, V

MANFREDOTTI, C

MURRI, R

PICCOLO, R

RIZZO, A

VASANELLI, L

机构：

[1] UNIV BARI,IST FIS,I-70124 BARI,ITALY

[2] CNR,GRUPPO NAZL STRUTTURA MAT,ROME,ITALY

来源：

关键词：

D O I：

10.1016/0038-1098(77)90036-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：575 / 578

页数：4

共 14 条

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[4] FIVAZ RC, 1975, TRANSPORT PROPERTIES
[5] HALL-EFFECT IN N-TYPE GAS
MANFREDOTTI, C
MURRI, R
RIZZO, A
VASANELLI, L
[J]. SOLID STATE COMMUNICATIONS, 1976, 19 (04) : 339 - 342
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RIZZO, A
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (02): : 475 - 480
[7] MANFREDOTTI C, TO BE PUBLISHED
[8] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS
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[9] CRYSTAL STRUCTURES OF SEMICONDUCTORS + GENERAL VALENCE RULE
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[J]. ACTA CRYSTALLOGRAPHICA, 1964, 17 (01): : 1 - &
[10] ELECTRON-LATTICE INTERACTION IN GALLIUM SELENIDE
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[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 65 (01): : 249 - 254