PUNCH-THROUGH CURRENTS AND FLOATING STRIP POTENTIALS IN SILICON DETECTORS

被引：37

作者：

ELLISON, J ^{[1
]}

HALL, G ^{[1
]}

ROE, S ^{[1
]}

WHEADON, R ^{[1
]}

AVSET, BS ^{[1
]}

EVENSEN, L ^{[1
]}

机构：

[1] CTR INDUSTRIFORSKNING,OSLO 3,NORWAY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 01期

关键词：

D O I：

10.1109/23.34447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：267 / 271

页数：5

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