MU-SR RESEARCH IN SEMICONDUCTORS

被引:13
作者
PATTERSON, BD
机构
[1] Department of Physics, Simon fraser university, Burnaby, V5A 1S6, B. C.
来源
HYPERFINE INTERACTIONS | 1979年 / 6卷 / 1-4期
关键词
D O I
10.1007/BF01028784
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
Muon and muonium states in semiconductors especially silicon and germanium, have been the subject of μSR research from the birth of the μSR technique until the present. They are now under active investigation at at least three laboratories. Three different electronic states of the muon impurity have been firmly identified in silicon and more tentatively in germanium. This research has produced a significant amount of published literature which, due to the span of time and distance between the various experiments, shows large differences in technique, emphasis and style. I will attempt to present a coherent view of this literature distinghuishing the well-understood effects from those not understood. © 1979 North-Holland Publishing Company.
引用
收藏
页码:155 / 161
页数:7
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