STRUCTURAL DEFECTS IN HIGH-RESISTIVITY CADMIUM TELLURIDE

被引:25
作者
SAMIMI, M
BIGLARI, B
HAGEALI, M
KOEBEL, JM
SIFFERT, P
机构
关键词
D O I
10.1016/0168-9002(89)91364-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:243 / 248
页数:6
相关论文
共 25 条
[1]  
AGRINSKAYA NV, 1971, SOV PHYS SEMICOND+, V5, P767
[2]  
Biglari B., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P387
[3]   THE INTERACTION OF COPPER WITH STRUCTURAL DEFECTS IN THM GROWN CADMIUM TELLURIDE [J].
BIGLARI, B ;
SAMIMI, M ;
HAGEALI, M ;
KOEBEL, JM ;
SIFFERT, P .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 283 (02) :249-254
[4]   PASSIVATION OF HIGH-RESISTIVITY CADMIUM TELLURIDE BY HYDROGEN IMPLANTATION [J].
BIGLARI, B ;
SAMIMI, M ;
HAGEALI, M ;
SIFFERT, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01) :47-52
[5]   IDENTIFICATION OF CU-ACCEPTOR AND AG-ACCEPTOR IN CDTE [J].
CHAMONAL, JP ;
MOLVA, E ;
PAUTRAT, JL .
SOLID STATE COMMUNICATIONS, 1982, 43 (11) :801-805
[6]   COMPLEX BEHAVIOR OF AG IN CDTE [J].
CHAMONAL, JP ;
MOLVA, E ;
PAUTRAT, JL ;
REVOIL, L .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :297-300
[7]  
CHAPNIN VA, 1969, SOV PHYS SEMICOND+, V3, P481
[8]  
Chung K. L., 1974, ELEMENTARY PROBABILI
[9]  
CORBET JW, 1984, MRS S P, V2
[10]  
de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361