CALCULATION OF FERMI ENERGY AND BANDTAIL PARAMETERS IN HEAVILY DOPED DEGENERATE NORMAL-TYPE GAAS

被引：77

作者：

HWANG, CJ

机构：

来源：

关键词：

D O I：

10.1063/1.1659280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2668 / +

页数：1

共 29 条

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P346
[2] BONCHBRUEVICH VL, 1966, SEMICONDUCT SEMIMET, V1, P101
[3] DINGLE RB, 1955, PHILOS MAG, V46, P831
[4] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
[5] EMELYANE.OV, 1965, FIZ TVERD TELA+, V7, P1063
[6] EMELYANENKO OV, 1965, FIZ TVERD TELA, V7, P1315
[7] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS
HALPERIN, BI
LAX, M
[J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +
[8] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[9] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3731 - &
[10] INFRARED ABSORPTION OF INDIUM ANTIMONIDE
KAISER, W
FAN, HY
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 966 - 968