HIGH-PRESSURE INVESTIGATION OF AN (INAI)AS-(INGA)AS RESONANT TUNNELING DOUBLE-BARRIER STRUCTURE

被引：2

作者：

CURY, LA

DMOWSKI, L

CELESTE, A

PORTAL, JC

SIVCO, DL

CHO, AY

FOSTER, TJ

EAVES, L

DAVIES, M

HEATH, M

MIDDLETON, JR

机构：

[1] Lab. de Phys. des Solides, Inst. Nat. des Sci. Appl., Toulouse

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 06期

关键词：

D O I：

10.1088/0268-1242/6/6/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated an asymmetric ln0.52Al0.48As-ln0.53Ga0.47As double-barrier structure under hydrostatic pressures up to 15 kbar. Two resonance positions in the current against voltage characteristics are observed. The pressure effects on the first one are controlled by a GAMMA-like confining potential. The inflection point region corresponding to the second resonance at higher bias becomes more pronounced as the pressure is increased. The possible tunnelling mechanisms to interpret this effect are analysed. We also analyse the current in the valley region using a simple WKB formalism.

引用

页码：449 / 453

页数：5

共 15 条

[1]

Foster TJ, Leadbeater ML, Maude DK, Alves ES, Eaves L, Henini M, Hughes OH, Celeste A, Portal JC, Lancefield D, Adams AR, Solid-State Electron., 32, 12, (1989)

[2]

Mendez EE, Chang LL, Surf. Sci., 229, 1-3, (1990)

[3]

Olego D, Chang TY, Silberg E, Caridi EA, Pinczuk A, Appl. Phys. Lett., 41, 5, (1982)

[4]

Alavi K, Aggarwal RL, Groves SH, Phys. Rev., 21, 3, (1980)

[5]

People R, Wecht KW, Alavi K, Cho AY, Appl. Phys. Lett., 43, 1, (1983)

[6]

Lorenz MR, Onton A, (1970)

[7]

Adachi S, J. Appl. Phys., 53, 8, (1982)

[8]

Ben Amor S, (1987)

[9]

Gauthier D, Dmowski L, Portal JC, Leadley D, Hopkins MA, Brummell MA, Nicholas RJ, Razeghi M, Maurel P, Superlatt. Microstruct., 4, 2, (1988)

[10]

Adelabu JSA, Ridley BK, Davies GJ, Semicond. Sci. Technol., 4, 8, (1989)

← 1 2 →