DIELECTRIC CONFINEMENT EFFECT FOR EXCITON AND BIEXCITON STATES IN PBI4-BASED 2-DIMENSIONAL SEMICONDUCTOR STRUCTURES

被引：137

作者：

ISHIHARA, T ^{[1
]}

HONG, X ^{[1
]}

DING, J ^{[1
]}

NURMIKKO, AV ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91147-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the role of dielectric confinement for enhancing excitonic effects in layered PbI4-based compounds. In particular, we demonstrate that unusually strong biexciton effects are readily observable (binding energy on the order of 50 meV) and that the large excitonic binding (approximately 300 meV) can be modified by chemically adjusting the dielectric constant of the alkylammonium barrier layers.

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页码：323 / 326

页数：4

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