IMPROVEMENT OF LATTICE SITE LOCATION OF GA IMPLANTED INTO AL AFTER PULSED ELECTRON-BEAM ANNEALING

被引：12

作者：

HUSSAIN, T

GEERK, J

RATZEL, F

LINKER, G

机构：

来源：

关键词：

D O I：

10.1063/1.91913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：298 / 300

页数：3

相关论文

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GREENWALD, AC
KIRKPATRICK, AR
LITTLE, RG
MINNUCCI, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 783 - 787
[3] DEPENDENCE OF DEFECT STRUCTURES ON IMPLANTED IMPURITY SPECIES IN AL SINGLE-CRYSTALS
HUSSAIN, T
LINKER, G
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 317 - 321
[4] KIRKPATRICK AR, 1979, LASER EFFECTS ION IM, P232
[5] RIMINI E, 1979, LASER EFFECTS ION IM