IMPLANTATION DAMAGE IN AMORPHOUS-SILICON

被引：24

作者：

MULLER, G

LECOMBER, PG

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1981年 / 43卷 / 03期

关键词：

D O I：

10.1080/01418638108222107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：419 / 431

页数：13

共 20 条

[1]

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[5]

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[7] THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON [J].

KALBITZER, S ;

MULLER, G ;

LECOMBER, PG ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04) :439-456

[8] MICROSTRUCTURE OF PLASMA-DEPOSITED A-SI-H FILMS [J].

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APPLIED PHYSICS LETTERS, 1979, 35 (03) :244-246

[9]

Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[10] ELECTRICAL AND PHOTOCONDUCTIVE PROPERTIES OF ION-IMPLANTED AMORPHOUS-SILICON [J].

LECOMBER, PG ;

SPEAR, WE ;

MULLER, G ;

KALBITZER, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :327-332

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