COULOMB GAP IN SODIUM TUNGSTEN BRONZES

被引：41

作者：

DAVIES, JH

FRANZ, JR

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.57.475

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：475 / 478

页数：4

共 18 条

[1] COULOMB GAP IN DISORDERED SYSTEMS - COMPUTER-SIMULATION
BARANOVSKII, SD
EFROS, AL
GELMONT, BL
SHKLOVSKII, BI
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (06): : 1023 - 1034
[2] BULLETT DW, 1983, SOLID STATE COMMUN, V46, P575, DOI 10.1016/0038-1098(83)90695-6
[3] PROPERTIES OF THE ELECTRON GLASS
DAVIES, JH
LEE, PA
RICE, TM
[J]. PHYSICAL REVIEW B, 1984, 29 (08): : 4260 - 4271
[4] ELECTRON GLASS
DAVIES, JH
LEE, PA
RICE, TM
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (10) : 758 - 761
[5] COULOMB GAPS AND HUBBARD GAPS
DAVIES, JH
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (17): : 3031 - 3043
[6] SUBSTITUTION OF TUNGSTEN BY TANTALUM IN TUNGSTEN BRONZES, NAXTAYW1-YO3
DOUMERC, JP
MARCUS, J
POUCHARD, M
HAGENMULLER, P
[J]. MATERIALS RESEARCH BULLETIN, 1979, 14 (02) : 201 - 205
[7] METAL-INSULATOR-TRANSITION IN THE COMPENSATED SODIUM BRONZE, NA-CHI-TA-GAMMA-W1-GAMMA-O3
DUBSON, MA
HOLCOMB, DF
[J]. PHYSICAL REVIEW B, 1985, 32 (04): : 1955 - 1960
[8] IMPURITY BAND-STRUCTURE IN LIGHTLY DOPED SEMICONDUCTORS
EFROS, AL
VANLIEN, N
SHKLOVSKII, BI
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (10): : 1869 - 1881
[9] COULOMB GAP IN DISORDERED SYSTEMS
EFROS, AL
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (11): : 2021 - 2030
[10] COULOMB GAP AND LOW-TEMPERATURE CONDUCTIVITY OF DISORDERED SYSTEMS
EFROS, AL
SHKLOVSKII, BI
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (04): : L49 - L51