MUONIUM STATES IN SEMICONDUCTORS

被引:433
作者
PATTERSON, BD
机构
关键词
D O I
10.1103/RevModPhys.60.69
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:69 / 159
页数:91
相关论文
共 250 条
  • [1] ABRAGAM A, 1984, CR ACAD SCI II, V299, P95
  • [2] ABRAGAM A, 1961, PRINCIPLES NUCLEAR M, P439
  • [3] MUONIUM AS A PROBE FOR DEFECTS IN ELECTRON-IRRADIATED SILICON
    ALBERT, E
    BARTH, S
    MOSLANG, A
    RECKNAGEL, E
    WEIDINGER, A
    MOSER, P
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 759 - 761
  • [4] ELECTRON-IRRADIATION EFFECTS ON MUONIUM STATES IN SILICON
    ALBERT, E
    MOSLANG, A
    RECKNAGEL, E
    WEIDINGER, A
    [J]. HYPERFINE INTERACTIONS, 1983, 15 (1-4): : 525 - 528
  • [5] ALBERT E, 1985, 17TH P INT C PHYS SE, P693
  • [6] ALBERT E, 1984, HYPERFINE INTERACT, V17, P611
  • [7] ALBERT E, 1986, THESIS U KONSTANZ
  • [8] WHY MUONS AND PROTONS ARE DEEP DONORS IN SI AND GE
    ALTARELLI, M
    HSU, WY
    [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (18) : 1346 - 1349
  • [9] Anderson C. D., 1938, PHYS REV, V54, P88
  • [10] ANDERSON CD, 1937, PHYS REV, V50, P263