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INTERFACE CHARACTERISTICS OF REACTIVELY SPUTTERED AL2O3-SI STRUCTURE
被引:7
作者
:
TANAKA, T
论文数:
0
引用数:
0
h-index:
0
TANAKA, T
IWAUCHI, S
论文数:
0
引用数:
0
h-index:
0
IWAUCHI, S
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1969年
/ 8卷
/ 06期
关键词
:
D O I
:
10.1143/JJAP.8.730
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:730 / +
页数:1
相关论文
共 24 条
[1]
DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
[J].
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
:948
-&
[2]
OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
;
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
:308
-&
[3]
PHASE CHANGES IN THIN REACTIVELY SPUTTERED ALUMINA FILMS
[J].
FRIESER, RG
论文数:
0
引用数:
0
h-index:
0
FRIESER, RG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(04)
:357
-&
[4]
EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE
[J].
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
;
WARFIELD, G
论文数:
0
引用数:
0
h-index:
0
WARFIELD, G
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(04)
:167
-&
[5]
PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER
[J].
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
;
WARFIELD, G
论文数:
0
引用数:
0
h-index:
0
WARFIELD, G
.
SOLID-STATE ELECTRONICS,
1965,
8
(03)
:321
-+
[6]
SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS
[J].
HSU, ST
论文数:
0
引用数:
0
h-index:
0
HSU, ST
;
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
FITZGERALD, DJ
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
APPLIED PHYSICS LETTERS,
1968,
12
(09)
:287
-+
[7]
ON ROLE OF SODIUM AND HYDROGEN IN SI-SIO2 SYSTEM
[J].
KOOI, E
论文数:
0
引用数:
0
h-index:
0
KOOI, E
;
WHELAN, MV
论文数:
0
引用数:
0
h-index:
0
WHELAN, MV
.
APPLIED PHYSICS LETTERS,
1966,
9
(08)
:314
-+
[8]
IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS
[J].
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
LEHOVEC, K
;
SLOBODSKOY, A
论文数:
0
引用数:
0
h-index:
0
SLOBODSKOY, A
.
SOLID-STATE ELECTRONICS,
1964,
7
(01)
:59
-79
[9]
FREQUENCY DEPENDENCE OF IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES (SI-SIO2 T)
[J].
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
LEHOVEC, K
.
APPLIED PHYSICS LETTERS,
1966,
8
(02)
:48
-&
[10]
NAGANO K, 1969, JAPAN J APPL PHYS, V8
←
1
2
3
→
共 24 条
[1]
DEPOSITION AND PROPERTIES OF ALUMINUM OXIDE OBTAINED BY PYROLYTIC DECOMPOSITION OF AN ALUMINUM ALKOXIDE
[J].
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(09)
:948
-&
[2]
OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
;
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
:308
-&
[3]
PHASE CHANGES IN THIN REACTIVELY SPUTTERED ALUMINA FILMS
[J].
FRIESER, RG
论文数:
0
引用数:
0
h-index:
0
FRIESER, RG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(04)
:357
-&
[4]
EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE
[J].
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
;
WARFIELD, G
论文数:
0
引用数:
0
h-index:
0
WARFIELD, G
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(04)
:167
-&
[5]
PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER
[J].
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
;
WARFIELD, G
论文数:
0
引用数:
0
h-index:
0
WARFIELD, G
.
SOLID-STATE ELECTRONICS,
1965,
8
(03)
:321
-+
[6]
SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS
[J].
HSU, ST
论文数:
0
引用数:
0
h-index:
0
HSU, ST
;
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
FITZGERALD, DJ
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
APPLIED PHYSICS LETTERS,
1968,
12
(09)
:287
-+
[7]
ON ROLE OF SODIUM AND HYDROGEN IN SI-SIO2 SYSTEM
[J].
KOOI, E
论文数:
0
引用数:
0
h-index:
0
KOOI, E
;
WHELAN, MV
论文数:
0
引用数:
0
h-index:
0
WHELAN, MV
.
APPLIED PHYSICS LETTERS,
1966,
9
(08)
:314
-+
[8]
IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS
[J].
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
LEHOVEC, K
;
SLOBODSKOY, A
论文数:
0
引用数:
0
h-index:
0
SLOBODSKOY, A
.
SOLID-STATE ELECTRONICS,
1964,
7
(01)
:59
-79
[9]
FREQUENCY DEPENDENCE OF IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES (SI-SIO2 T)
[J].
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
LEHOVEC, K
.
APPLIED PHYSICS LETTERS,
1966,
8
(02)
:48
-&
[10]
NAGANO K, 1969, JAPAN J APPL PHYS, V8
←
1
2
3
→