CHARGED POINT-DEFECTS IN GAAS CRYSTALS EVALUATED BY NMR SPIN-ECHO

被引：15

作者：

SUEMITSU, M

NAKAJO, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3178 / 3186

页数：9

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