SEMICONDUCTOR ENERGY GAPS FROM TUNNELING

被引：10

作者：

PIKE, GE

机构：

来源：

关键词：

D O I：

10.1063/1.1660118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：883 / &

共 7 条

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[6]

ROWELL JM, 1969, TUNNELING PHENOMENA, P281

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