EXPERIMENTAL-EVIDENCE FOR QUANTUM-SIZE-EFFECT FINE-STRUCTURES IN THE RESISTIVITY OF ULTRATHIN PB AND PB-IN FILMS

被引:102
作者
JALOCHOWSKI, M [1 ]
BAUER, E [1 ]
KNOPPE, H [1 ]
LILIENKAMP, G [1 ]
机构
[1] TECH UNIV CLAUSTHAL,INST PHYS,W-3392 CLAUSTHAL ZELLERFE,GERMANY
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 23期
关键词
D O I
10.1103/PhysRevB.45.13607
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The resistivity of ultrathin single-crystalline Pb and Pb-In layers with thicknesses d smaller than the bulk mean free path 1, is measured during deposition onto Si(111)-(6X6)Au surfaces at about 110 K. The structure of the layers is monitored by reflection high-energy electron diffraction (RHEED). Oscillations of the RHEED specular beam intensity are highly correlated with fine structures of the resistivity. The quantum-size-effect theory is used for a quantitative analysis of the data. The fine structure, volume impurities, small-scale roughness, and large-scale thickness fluctuations are taken into account. The impact of the layer-by-layer growth mode of ultrathin metal films on the thickness dependence of the resistivity is discussed.
引用
收藏
页码:13607 / 13613
页数:7
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