22 GHZ PHOTODIODE MONOLITHICALLY INTEGRATED WITH OPTICAL WAVE-GUIDE ON SEMIINSULATING INP USING NOVEL BUTT-JOINT STRUCTURE

被引：9

作者：

KATO, K

HATA, S

KOZEN, A

OKU, S

MATSUMOTO, S

YOSHIDA, J

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa Pref., 243-01

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 12期

关键词：

INTEGRATED OPTICS; PHOTODIODES; OPTOELECTRONICS;

D O I：

10.1049/el:19920719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahigh-speed photodiode with an input waveguide. The SiO2 sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode pn junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.

引用

页码：1140 / 1142

页数：3

共 8 条

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