BORON-INDUCED MICROSTRAINS IN DISLOCATION-FREE SILICON CRYSTALS

被引：17

作者：

SCHWUTTKE, GH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 06期

关键词：

D O I：

10.1063/1.1702652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1662 / &

共 15 条

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[8] ELECTRON MICROSCOPY OF PRISMATIC DISLOCATIONS IN SILICON [J].

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