ISOLATED VACANCY IN DIAMOND AND SILICON

被引：4

作者：

LARKINS, FP ^{[1
]}

机构：

[1] MONASH UNIV,DEPT CHEM,CLAYTON 3168,VICTORIA,AUSTL.

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 18期

关键词：

D O I：

10.1088/0022-3719/6/18/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L345 / L348

页数：4

共 9 条

[1] ISOLATED SINGLE VACANCY IN DIAMOND .1. ELECTRONIC STRUCTURE [J].

COULSON, CA ;

LARKINS, FP .

[2] COLOUR CENTRES IN IRRADIATED DIAMONDS .1. [J].

COULSON, CA ;

KEARSLEY, MJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227) :433-454

[3] AN EXTENDED HUCKEL THEORY .I. HYDROCARBONS [J].

HOFFMANN, R .

LARKINS, FP .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (18) :3065-&

[5] ELECTRONIC STRUCTURE OF ISOLATED VACANCY IN SILICON [J].

LARKINS, FP .

[6] ISOLATED SINGLE VACANCY IN DIAMOND .2. JAHN-TELLER EFFECT [J].

LARKINS, FP .

[7]

LARKINS FP, 1971, J PHYS PART C SOLID, V4, P143, DOI 10.1088/0022-3719/4/2/002

[8]

LIDIARD AB, 1972, DEFECTS SEMICONDUCTO

MESSMER, RP ;

WATKINS, GD .