MICROWAVE AMPLIFICATION WITH GAAS AVALANCHE DIODES

被引：5

作者：

KUNO, HJ

COLLARD, JR

GOBAT, A

机构：

[1] Radio Corporation of America, Microwave Applied Research Laboratory, David Sarnoff Research Center

来源：

ELECTRONICS LETTERS | 1968年 / 4卷 / 24期

关键词：

D O I：

10.1049/el:19680421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results obtained with an Xband reflection amplifier using vapour-phase epitaxial GaAs p-n junctions biased into avalanche breakdown are presented. Single-sideband noise figures of 17dB, power gains in excess of 30 dB, and a high dynamic range have been repeatedly measured. The noise figures obtained with a large number of these diodes are significantly lower than those reported for Si or Ge diodes. © 1968, The Institution of Electrical Engineers. All rights reserved.

引用

页码：540 / &

共 7 条

[1] SELF-PUMPED PARAMETRIC AMPLIFICATION WITH AN AVALANCHING DIODE [J].

CLORFEINE, AS .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (12) :1956-+

[2]

DELOACH BC, 1966, IEEE T ELECTRON DEV, VED13, P181

[3]

HINES ME, 1966, IEEE T, VED13, P158

[4]

JOSENHANS JG, 1966, IEEE T ELECTRON DEVI, VED13, P206

[5]

MCINTYRE RJ, 1966, IEEE T ELECTRON DEVI, VED13, P164

[6] LARGE-SIGNAL AMPLICATION WITH AVALANCHE DEVICES [J].

SCHERER, EF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03) :464-+

[7]

STERZER F, 1968, MICROWAVE J, V11, P67

← 1 →