SIMPLE METHOD FOR GROWING V3SI SINGLE-CRYSTALS

被引：6

作者：

CALLAGHAN, T ^{[1
]}

SCHWANEBECK, J ^{[1
]}

TOTH, L ^{[1
]}

DAYAN, M ^{[1
]}

GOLDMAN, AM ^{[1
]}

机构：

[1] UNIV MINNESOTA,SCH PHYS & ASTRON,MINNEAPOLIS,MN 55455

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.325104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.

引用

页码：2523 / 2525

页数：3

共 6 条

[1] PREPARATION OF SINGLE CRYSTALS OF V3SI
GREINER, ES
MASON, H
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 3058 - &
[2] APW-LCAO BAND MODEL FOR A15 COMPOUNDS
MATTHEISS, LF
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2161 - 2180
[3] Pfann W. G., 1958, ZONE MELTING
[4] PROGRESS IN SINGLE-CRYSTAL GROWTH OF V3SI
SEEBER, B
NICKL, J
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01): : 73 - 76
[5] ELECTRICAL-RESISTIVITY OF TRANSFORMING AND NON-TRANSFORMING V3SI
TAUB, H
WILLIAMSON, SJ
[J]. SOLID STATE COMMUNICATIONS, 1974, 15 (02) : 181 - 184
[6] EFFECT OF SUPERCONDUCTING FLUCTUATIONS ON SPIN RELAXATION OF QUASI-ONE-DIMENSIONAL COMPOUNDS
WEGER, M
MANIV, T
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (09) : 584 - &

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