10 GBIT/S MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING AN MSM PHOTODIODE AND ALGAAS/GAAS HEMTS

被引：5

作者：

HURM, V

ROSENZWEIG, J

LUDWIG, M

AXMANN, A

BENZ, W

BERROTH, M

OSORIO, R

HULSMANN, A

KAUFEL, G

KOHLER, K

RAYNOR, B

SCHNEIDER, J

机构：

[1] Fraunhofer-Institut für Angewandte Festkörperphysik, D-7800 Freiburg

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90228-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5-mu-m recessed-gate AlGaAs/GaAs HEMTs. A -3 dB bandwidth of 11.3 GHz has been achieved.

引用

页码：275 / 278

页数：4

共 5 条

[1]

Harder, Van Zeghbroeck, Meier, Patrick, Vettiger, IEEE Electron Device Lett., 9 EDL, pp. 171-173, (1988)

[2]

Hamaguchi, Makiuchi, Kumai, Wada, IEEE Electron Device Lett., 8 EDL, pp. 39-41, (1987)

[3]

Hurm, Rosenzweig, Ludwig, Benz, Berroth, Hulsmann, Kaufel, Kohler, Raynor, Schneider, Electron. Lett., 27, pp. 734-735, (1991)

[4]

Kohler, Ganser, Bachem, Maier, Hornung, Hulsmann, Proc. Int. Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser., 112, pp. 521-526, (1990)

[5]

Hulsmann, Kaufel, Kohler, Raynor, Schneider, Jakobus, E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits, Japanese Journal of Applied Physics, 29, pp. 2317-2320, (1990)

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