BANDGAP AND INTERFACE ENGINEERING FOR ADVANCED ELECTRONIC AND PHOTONIC DEVICES

[1] Capasso F., J. Vac. Sci. Technol. B, 1, (1983)

[2] Capasso F., Science, 235, (1987)

[3] Cho A.Y., Arthur J.R., Progress in Solid State Chemistry, 10, (1975)

[4] Dingle R., Wiegmann W., Henry C.H., Phys. Reu Lett., 33, (1974)

[5] Semiconductors and Semimetals, 24, (1987)

[6] Kroemer H., Proc. IEEE, 70, (1983)

[7] Chen Y.K., Nottenburg R.N., Panish M.B., Hamm R.A., Humphrey D.A., IEEE Electron Device Lett, 10, (1989)

[8] Kroemer H., Fairman R.D., U.S. Patent, 3, pp. 143-533, (1968)

[9] Vengurlekar A., Capasso F., Chiu T.H., Appl. Phys. Lett., 57, (1990)

[10] Capasso F., Tsang W.T., Williams G.F., IEEE Trans. Electron Devices ED-30, (1983)

[1] Capasso F., J. Vac. Sci. Technol. B, 1, (1983)

[2] Capasso F., Science, 235, (1987)

[3] Cho A.Y., Arthur J.R., Progress in Solid State Chemistry, 10, (1975)

[4] Dingle R., Wiegmann W., Henry C.H., Phys. Reu Lett., 33, (1974)

[5] Semiconductors and Semimetals, 24, (1987)

[6] Kroemer H., Proc. IEEE, 70, (1983)

[7] Chen Y.K., Nottenburg R.N., Panish M.B., Hamm R.A., Humphrey D.A., IEEE Electron Device Lett, 10, (1989)

[8] Kroemer H., Fairman R.D., U.S. Patent, 3, pp. 143-533, (1968)

[9] Vengurlekar A., Capasso F., Chiu T.H., Appl. Phys. Lett., 57, (1990)

[10] Capasso F., Tsang W.T., Williams G.F., IEEE Trans. Electron Devices ED-30, (1983)