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FEMTOSECOND OPTICAL-RESPONSE OF LOW-TEMPERATURE-GROWN IN0.53GA0.47AS

被引：11
作者：
TOUSLEY, BC
MEHTA, SM
LOBAD, AI
RODNEY, PJ
FAUCHET, PM
COOKE, P
机构：
[1] US MIL ACAD,DEPT ELECT ENGN & COMP SCI,W POINT,NY 10996
[2] LAB LASER ENERGET,ROCHESTER,NY 14623
[3] USA,RES LAB,FT MONMOUTH,NJ 07703
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 12期
关键词：
CARRIER LIFETIME; LOW-TEMPERATURE-GROWN GAAS; MOLECULAR BEAM EPITAXY;
D O I：
10.1007/BF02650002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A femtosecond, tunable color center laser was used to conduct degenerate pump-probe transmission spectroscopy of thin film low temperature grown molecular beam epitaxy In0.53Ga0.47As samples. Low temperature molecular beam epitaxy In0.53Ga0.47As exhibits a growth-temperature dependent femtosecond optical response when probed near the conduction band edge. Below T-g= 250 degrees C, the optical response time of the material is subpicosecond in duration, and we observe induced absorption, which we suggest is due to the formation of a quasi-''three-level system.''
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页码：1477 / 1480
页数：4
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