ULTRASONIC-ATTENUATION IN SEMICONDUCTOR QUANTUM HETEROSTRUCTURES UNDER A HIGH MAGNETIC-FIELD

被引：6

作者：

RODRIGUES, C

FONSECA, ALA

NUNES, OAC

机构：

[1] Department of Physics, University of Brasília

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 189卷 / 01期

关键词：

D O I：

10.1002/pssb.2221890114

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A theory of ultrasonic attenuation in a quasi-two-dimensional electron gas in a quantum well semiconductor heterostructure in the presence of a quantizing magnetic field is presented. The effect of the high magnetic field on the ultrasonic attenuation coefficient is studied in the extreme quantum limit, when all the electrons are accomodated in the lowest Landau level and electro-subband, Numerical examples are shown and discussed.

引用

页码：117 / 128

页数：12

共 16 条

[1]

Ando T., 1982, REV MOD PHYS, V54, P438

[2] LONGITUDINAL MAGNETORESISTANCE IN THE QUANTUM LIMIT [J].