DIFFUSION OF ZINC IN GALLIUM ARSENIDE UNDER ARSENIC VAPOR PRESSURE

[1] THE DIFFUSION OF IONIZED IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 134 - &

[2] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1960 - &

[3] CRANK J, 1956, MATHEMATICS DIFFUSIO, P148

[4] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 127 - 133

[5] GOLDSTEIN B, 1959, PHYS REV, V118, P1024

[6] KENDALL DL, 1961, AIEEIRE DEVICE RESEA

[7] KUDO K, 1965, NIPPON KAGAKU ZASSHI, V86, P1050

[8] KUDO K, 1967, RADIOISOTOPES, V16, P199

[9] KUDO K, 1966, RADIOISOTOPES TOKYO, V15, P209

[10] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) : 127 - 130

[1] THE DIFFUSION OF IONIZED IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 134 - &

[2] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1960 - &

[3] CRANK J, 1956, MATHEMATICS DIFFUSIO, P148

[4] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 127 - 133

[5] GOLDSTEIN B, 1959, PHYS REV, V118, P1024

[6] KENDALL DL, 1961, AIEEIRE DEVICE RESEA

[7] KUDO K, 1965, NIPPON KAGAKU ZASSHI, V86, P1050

[8] KUDO K, 1967, RADIOISOTOPES, V16, P199

[9] KUDO K, 1966, RADIOISOTOPES TOKYO, V15, P209

[10] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) : 127 - 130