STRUCTURAL DETERMINATIONS OF LIQUID SEMICONDUCTORS USING EXTENDED X-RAY ABSORPTION FINE-STRUCTURE

被引：39

作者：

CROZIER, ED

LYTLE, FW

SAYERS, DE

STERN, EA

机构：

[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BRITISH COLUMBI,CANADA

[2] UNIV WASHINGTON,DEPT PHYS,SEATTLE,WA 98195

[3] BOEING CO,SEATTLE,WA 98124

来源：

CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE | 1977年 / 55卷 / 11期

关键词：

D O I：

10.1139/v77-274

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1968 / 1974

页数：7

共 16 条

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[2] THEORY OF EXTENDED X-RAY ABSORPTION-EDGE FINE-STRUCTURE (EXAFS) IN CRYSTALLINE SOLIDS
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[3] EXPERIMENTAL-EVIDENCE FROM LIQUID SEMICONDUCTORS
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[6] THEORY OF EXTENDED X-RAY ABSORPTION FINE-STRUCTURE
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[7] Lucovsky G., 1972, J NONCRYST SOLIDS, V8-10, P185, DOI 10.1016/0022-3093(72)90134-2
[8] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE TECHNIQUE .2. EXPERIMENTAL PRACTICE AND SELECTED RESULTS
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[9] Sayers D. E., 1970, Advances in X-ray analysis, P248
[10] NEW METHOD TO MEASURE STRUCTURAL DISORDER - APPLICATION TO GEO2 GLASS
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